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NTTFD4D1N03P1E onsemi

nttfd4d1n03p1e-d.pdf Hersteller: onsemi
Description: FET 30V 4.1MOHM PC33 DUAL SYMM
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 270µA
Supplier Device Package: 12-WQFN (3.3x3.3)
auf Bestellung 2809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.46 EUR
10+ 2.02 EUR
100+ 1.57 EUR
500+ 1.33 EUR
1000+ 1.08 EUR
Mindestbestellmenge: 8
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Technische Details NTTFD4D1N03P1E onsemi

Description: FET 30V 4.1MOHM PC33 DUAL SYMM, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W (Ta), 20W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V, Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 270µA, Supplier Device Package: 12-WQFN (3.3x3.3).

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NTTFD4D1N03P1E Hersteller : onsemi nttfd4d1n03p1e-d.pdf Description: FET 30V 4.1MOHM PC33 DUAL SYMM
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 270µA
Supplier Device Package: 12-WQFN (3.3x3.3)
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NTTFD4D1N03P1E NTTFD4D1N03P1E Hersteller : onsemi NTTFD4D1N03P1E_D-2944143.pdf MOSFET FET 30V 4.1MOHM PC33 DUAL SYMM
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