auf Bestellung 3393 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.31 EUR |
| 10+ | 2.38 EUR |
| 100+ | 1.80 EUR |
| 500+ | 1.47 EUR |
| 1000+ | 1.43 EUR |
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Technische Details NTTFD9D0N06HLTWG onsemi
Description: MOSFET, POWER, 60V POWERTRENCH P, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Ta), 26W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V, Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 50µA, Supplier Device Package: 12-WQFN (3.3x3.3), Part Status: Active.
Weitere Produktangebote NTTFD9D0N06HLTWG nach Preis ab 2.36 EUR bis 4.98 EUR
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NTTFD9D0N06HLTWG | Hersteller : onsemi |
 Description: MOSFET, POWER, 60V POWERTRENCH PPackaging: Cut Tape (CT) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 12-WQFN (3.3x3.3) Part Status: Active |
auf Bestellung 2984 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFD9D0N06HLTWG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 9A 12-Pin WQFN EP T/R |
Produkt ist nicht verfügbar |
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NTTFD9D0N06HLTWG | Hersteller : onsemi |
Description: MOSFET, POWER, 60V POWERTRENCH P Packaging: Tape & Reel (TR) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 12-WQFN (3.3x3.3) Part Status: Active |
Produkt ist nicht verfügbar |