| Anzahl | Preis |
|---|---|
| 1+ | 4.26 EUR |
| 10+ | 2.76 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.54 EUR |
| 3000+ | 1.47 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTTFD9D0N06HLTWG onsemi
Description: MOSFET, POWER, 60V POWERTRENCH P, Part Status: Active, Supplier Device Package: 12-WQFN (3.3x3.3), Vgs(th) (Max) @ Id: 2V @ 50µA, Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V, Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 1.7W (Ta), 26W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 12-PowerWQFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTTFD9D0N06HLTWG nach Preis ab 2.36 EUR bis 4.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTTFD9D0N06HLTWG | onsemi |
 Description: MOSFET, POWER, 60V POWERTRENCH PPart Status: Active Supplier Device Package: 12-WQFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 1.7W (Ta), 26W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 12-PowerWQFN Packaging: Cut Tape (CT) |
auf Bestellung 2984 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTTFD9D0N06HLTWG |
|
Hersteller: onsemi
Description: MOSFET, POWER, 60V POWERTRENCH P
Part Status: Active
Supplier Device Package: 12-WQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.7W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Packaging: Cut Tape (CT)
Description: MOSFET, POWER, 60V POWERTRENCH P
Part Status: Active
Supplier Device Package: 12-WQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.7W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Packaging: Cut Tape (CT)
auf Bestellung 2984 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.98 EUR |
| 10+ | 4.14 EUR |
| 100+ | 3.29 EUR |
| 500+ | 2.79 EUR |
| 1000+ | 2.36 EUR |