NTTFS002N04CLTAG-SR01 onsemi
Hersteller: onsemi
Description: T6 40V SG NCH U8FL
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 3.2W (Ta), 85W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.93 EUR |
| 3000+ | 0.87 EUR |
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Technische Details NTTFS002N04CLTAG-SR01 onsemi
Description: T6 40V SG NCH U8FL, Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2V @ 90µA, Power Dissipation (Max): 3.2W (Ta), 85W (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTTFS002N04CLTAG-SR01 nach Preis ab 0.88 EUR bis 3.24 EUR
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NTTFS002N04CLTAG-SR01 | onsemi |
Description: T6 40V SG NCH U8FL Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 90µA Power Dissipation (Max): 3.2W (Ta), 85W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS002N04CLTAG-SR01 | onsemi |
MOSFETs T6 40V SG NCH U8FL |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTTFS002N04CLTAG-SR01 |
|
Hersteller: onsemi
Description: T6 40V SG NCH U8FL
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 3.2W (Ta), 85W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: T6 40V SG NCH U8FL
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 3.2W (Ta), 85W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 142A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.19 EUR |
| NTTFS002N04CLTAG-SR01 |
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Hersteller: onsemi
MOSFETs T6 40V SG NCH U8FL
MOSFETs T6 40V SG NCH U8FL
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.24 EUR |
| 10+ | 3.12 EUR |
| 100+ | 2.15 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.53 EUR |
| 1500+ | 1.01 EUR |
| 3000+ | 0.88 EUR |