NTTFS015P03P8ZTAG onsemi
Hersteller: onsemi
Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
auf Bestellung 553500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.51 EUR |
3000+ | 0.45 EUR |
7500+ | 0.43 EUR |
10500+ | 0.4 EUR |
37500+ | 0.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTTFS015P03P8ZTAG onsemi
Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc), Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V, Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V.
Weitere Produktangebote NTTFS015P03P8ZTAG nach Preis ab 0.42 EUR bis 1.18 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NTTFS015P03P8ZTAG | Hersteller : onsemi | MOSFET PFET U8FL 30V 15MO |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
NTTFS015P03P8ZTAG | Hersteller : onsemi |
Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V |
auf Bestellung 554540 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
NTTFS015P03P8ZTAG | Hersteller : ON Semiconductor |
auf Bestellung 1490 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
NTTFS015P03P8ZTAG | Hersteller : ON Semiconductor | P Channel Power MOSFET |
Produkt ist nicht verfügbar |