| Anzahl | Preis |
|---|---|
| 2+ | 1.54 EUR |
| 10+ | 1.08 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.43 EUR |
| 3000+ | 0.4 EUR |
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Technische Details NTTFS015P03P8ZTAG onsemi
Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc), Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTTFS015P03P8ZTAG nach Preis ab 0.58 EUR bis 1.83 EUR
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NTTFS015P03P8ZTAG | onsemi |
 Description: MOSFET P-CH 30V 13.4A/47.6A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 1210 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTTFS015P03P8ZTAG | ON Semiconductor |
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auf Bestellung 1490 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTTFS015P03P8ZTAG |
|
Hersteller: onsemi
Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 1210 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.83 EUR |
| 16+ | 1.14 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| NTTFS015P03P8ZTAG |
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Hersteller: ON Semiconductor
auf Bestellung 1490 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH