NTTFS030N06CTAG onsemi
auf Bestellung 1500 Stücke:
Lieferzeit 126-140 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 1.38 EUR |
| 43+ | 1.21 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.65 EUR |
| 1500+ | 0.55 EUR |
| 3000+ | 0.5 EUR |
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Technische Details NTTFS030N06CTAG onsemi
Description: MOSFET N-CH 60V 6A/19A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 19A (Tc), Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V, Power Dissipation (Max): 2.5W (Ta), 23W (Tc), Vgs(th) (Max) @ Id: 4V @ 13µA, Supplier Device Package: 8-WDFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 30 V.
Weitere Produktangebote NTTFS030N06CTAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTTFS030N06CTAG | Hersteller : ON Semiconductor |
 Single N Channel Power MOSFET 60V, 27A, 29.7m |
Produkt ist nicht verfügbar |
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NTTFS030N06CTAG | Hersteller : onsemi |
Description: MOSFET N-CH 60V 6A/19A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 30 V |
Produkt ist nicht verfügbar |
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NTTFS030N06CTAG | Hersteller : onsemi |
Description: MOSFET N-CH 60V 6A/19A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 30 V |
Produkt ist nicht verfügbar |