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NTTFS080N10GTAG

NTTFS080N10GTAG onsemi

nttfs080n10g-d.pdf Hersteller: onsemi
Description: 100V MVSOA IN U8FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560.5 pF @ 50 V
auf Bestellung 10500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+0.82 EUR
3000+ 0.73 EUR
7500+ 0.69 EUR
10500+ 0.64 EUR
Mindestbestellmenge: 1500
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Technische Details NTTFS080N10GTAG onsemi

Description: 100V MVSOA IN U8FL PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 16A (Tc), Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V, Power Dissipation (Max): 2.5W (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 4V @ 22µA, Supplier Device Package: 8-WDFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 560.5 pF @ 50 V.

Weitere Produktangebote NTTFS080N10GTAG nach Preis ab 0.97 EUR bis 1.92 EUR

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NTTFS080N10GTAG NTTFS080N10GTAG Hersteller : onsemi nttfs080n10g-d.pdf Description: 100V MVSOA IN U8FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560.5 pF @ 50 V
auf Bestellung 11960 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.92 EUR
16+ 1.67 EUR
100+ 1.16 EUR
500+ 0.97 EUR
Mindestbestellmenge: 14
NTTFS080N10GTAG NTTFS080N10GTAG Hersteller : onsemi NTTFS080N10G_D-3150507.pdf MOSFET MOSFET Power, Single N-Channel, 8FL, 100V, 82mohm, 15A MOSFET Power, Single N-Channel, 8FL, 100V, 82mohm, 15A
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