NTTFS115P10M5 onsemi
Hersteller: onsemiDescription: MV5_100V_N_P_IN DUALS AND SINGLE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V
Power Dissipation (Max): 900mW (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.6 EUR |
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Technische Details NTTFS115P10M5 onsemi
Description: MV5_100V_N_P_IN DUALS AND SINGLE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 13A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V, Power Dissipation (Max): 900mW (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 4V @ 45µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 50 V.
Weitere Produktangebote NTTFS115P10M5 nach Preis ab 0.69 EUR bis 2.29 EUR
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NTTFS115P10M5 | Hersteller : onsemi |
Description: MV5_100V_N_P_IN DUALS AND SINGLE Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V Power Dissipation (Max): 900mW (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 50 V |
auf Bestellung 4170 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTTFS115P10M5 | Hersteller : ON Semiconductor |
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auf Bestellung 2920 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTTFS115P10M5 | Hersteller : ON Semiconductor |
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| NTTFS115P10M5 | Hersteller : ONSEMI |
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NTTFS115P10M5 | Hersteller : onsemi |
MOSFETs MV5_100V_N_P_IN DUALS AND SINGLE |
Produkt ist nicht verfügbar |