NTTFS115P10M5 onsemi
Hersteller: onsemi
Description: MV5_100V_N_P_IN DUALS AND SINGLE
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 45µA
Power Dissipation (Max): 900mW (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 13A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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Technische Details NTTFS115P10M5 onsemi
Description: MV5_100V_N_P_IN DUALS AND SINGLE, Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 4V @ 45µA, Power Dissipation (Max): 900mW (Ta), 41W (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 13A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote NTTFS115P10M5 nach Preis ab 0.56 EUR bis 2.38 EUR
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NTTFS115P10M5 | onsemi |
MOSFETs Power MOSFET, P Channel, -100V, -13 A, 120mohm |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS115P10M5 | onsemi |
Description: MV5_100V_N_P_IN DUALS AND SINGLE Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 4V @ 45µA Power Dissipation (Max): 900mW (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 13A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V |
auf Bestellung 13200 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTTFS115P10M5 | ON Semiconductor |
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auf Bestellung 2920 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTTFS115P10M5 |
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Hersteller: onsemi
MOSFETs Power MOSFET, P Channel, -100V, -13 A, 120mohm
MOSFETs Power MOSFET, P Channel, -100V, -13 A, 120mohm
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.29 EUR |
| 10+ | 1.44 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.69 EUR |
| 3000+ | 0.6 EUR |
| 6000+ | 0.56 EUR |
| NTTFS115P10M5 |
|
Hersteller: onsemi
Description: MV5_100V_N_P_IN DUALS AND SINGLE
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 45µA
Power Dissipation (Max): 900mW (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 13A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Description: MV5_100V_N_P_IN DUALS AND SINGLE
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 45µA
Power Dissipation (Max): 900mW (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 13A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
auf Bestellung 13200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.38 EUR |
| 12+ | 1.51 EUR |
| 100+ | 1 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.72 EUR |
| NTTFS115P10M5 |
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Hersteller: ON Semiconductor
auf Bestellung 2920 Stücke:
Lieferzeit 21-28 Tag (e)