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NTTFS1D2N02P1E

NTTFS1D2N02P1E onsemi

nttfs1d2n02p1e-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 25V 23A/180A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 38A, 10V
Power Dissipation (Max): 820mW (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 934µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 13 V
auf Bestellung 623 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.45 EUR
10+ 2.87 EUR
100+ 2.28 EUR
500+ 1.93 EUR
Mindestbestellmenge: 6
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Technische Details NTTFS1D2N02P1E onsemi

Description: MOSFET N-CH 25V 23A/180A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 180A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 38A, 10V, Power Dissipation (Max): 820mW (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2V @ 934µA, Supplier Device Package: 8-PQFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 13 V.

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NTTFS1D2N02P1E NTTFS1D2N02P1E Hersteller : onsemi NTTFS1D2N02P1E_D-2319021.pdf MOSFET 25V 1.2 MOHM PC33
auf Bestellung 1570 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+5.1 EUR
13+ 4.26 EUR
100+ 3.38 EUR
250+ 3.12 EUR
500+ 2.83 EUR
1000+ 2.42 EUR
3000+ 2.31 EUR
Mindestbestellmenge: 11
NTTFS1D2N02P1E Hersteller : ON Semiconductor nttfs1d2n02p1e-d.pdf
auf Bestellung 2820 Stücke:
Lieferzeit 21-28 Tag (e)
NTTFS1D2N02P1E NTTFS1D2N02P1E Hersteller : onsemi nttfs1d2n02p1e-d.pdf Description: MOSFET N-CH 25V 23A/180A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 38A, 10V
Power Dissipation (Max): 820mW (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 934µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 13 V
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