NTTFS1D4N04XMTAG onsemi
Hersteller: onsemiDescription: MOSFET - POWER, SINGLEN-CHANNEL,
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2278 pF @ 20 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.87 EUR |
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Technische Details NTTFS1D4N04XMTAG onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,, Packaging: Cut Tape (CT), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 178A (Tc), Rds On (Max) @ Id, Vgs: 1.43mOhm @ 20A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2278 pF @ 20 V.
Weitere Produktangebote NTTFS1D4N04XMTAG nach Preis ab 0.81 EUR bis 2.96 EUR
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NTTFS1D4N04XMTAG | Hersteller : onsemi |
Description: MOSFET - POWER, SINGLEN-CHANNEL, Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 178A (Tc) Rds On (Max) @ Id, Vgs: 1.43mOhm @ 20A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2278 pF @ 20 V |
auf Bestellung 2955 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS1D4N04XMTAG | Hersteller : onsemi |
MOSFETs 40V T10M IN U8FL PACKAGE |
auf Bestellung 920 Stücke: Lieferzeit 10-14 Tag (e) |
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