| Anzahl | Preis |
|---|---|
| 1+ | 3.24 EUR |
| 10+ | 2.02 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 0.88 EUR |
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Technische Details NTTFS1D4N04XMTAG onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,, Packaging: Cut Tape (CT), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 178A (Tc), Rds On (Max) @ Id, Vgs: 1.43mOhm @ 20A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2278 pF @ 20 V.
Weitere Produktangebote NTTFS1D4N04XMTAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NTTFS1D4N04XMTAG | onsemi |
 Description: MOSFET - POWER, SINGLEN-CHANNEL,Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 178A (Tc) Rds On (Max) @ Id, Vgs: 1.43mOhm @ 20A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2278 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
NTTFS1D4N04XMTAG | onsemi |
Description: MOSFET - POWER, SINGLEN-CHANNEL, Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 178A (Tc) Rds On (Max) @ Id, Vgs: 1.43mOhm @ 20A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2278 pF @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NTTFS1D4N04XMTAG |
|
Hersteller: onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2278 pF @ 20 V
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2278 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTTFS1D4N04XMTAG |
|
Hersteller: onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2278 pF @ 20 V
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2278 pF @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH