NTTFS1D8N02P1E onsemi
Hersteller: onsemiDescription: MOSFET N-CH 25V 20A/152A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 152A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 800mW (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 700µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3159 pF @ 13 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.76 EUR |
| 6000+ | 1.69 EUR |
| 9000+ | 1.63 EUR |
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Technische Details NTTFS1D8N02P1E onsemi
Description: MOSFET N-CH 25V 20A/152A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 152A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V, Power Dissipation (Max): 800mW (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 2V @ 700µA, Supplier Device Package: 8-PQFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3159 pF @ 13 V.
Weitere Produktangebote NTTFS1D8N02P1E nach Preis ab 1.73 EUR bis 3.91 EUR
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NTTFS1D8N02P1E | Hersteller : onsemi |
MOSFET FET 25V 1.8 MOHM PC33 SINGLE |
auf Bestellung 13360 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS1D8N02P1E | Hersteller : onsemi |
Description: MOSFET N-CH 25V 20A/152A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 152A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V Power Dissipation (Max): 800mW (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 700µA Supplier Device Package: 8-PQFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3159 pF @ 13 V |
auf Bestellung 14263 Stücke: Lieferzeit 10-14 Tag (e) |
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