NTTFS3A08PZTWG ON Semiconductor

Description: MOSFET P-CH 20V 9A 8WDFN, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 840mW (Ta), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 12A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).