NTTFS4823NTAG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 7.1A/50A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Bulk
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Technische Details NTTFS4823NTAG onsemi
Description: MOSFET N-CH 30V 7.1A/50A 8WDFN, Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 660mW (Ta), 32.9W (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTTFS4823NTAG
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NTTFS4823NTAG | onsemi |
Description: MOSFET N-CH 30V 7.1A/50A 8WDFN Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 660mW (Ta), 32.9W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTTFS4823NTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 7.1A/50A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 7.1A/50A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH