Technische Details NTTFS4824NTAG ON Semiconductor
Description: MOSFET N-CH 30V 8.3A/69A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 69A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Power Dissipation (Max): 660mW (Ta), 46.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 11.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2363 pF @ 12 V.
Weitere Produktangebote NTTFS4824NTAG
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTTFS4824NTAG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 14.9A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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NTTFS4824NTAG | Hersteller : onsemi |
Description: MOSFET N-CH 30V 8.3A/69A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 660mW (Ta), 46.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 2363 pF @ 12 V |
Produkt ist nicht verfügbar |