NTTFS4C08NTAG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.3A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 820mW (Ta), 25.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.31 EUR |
| 3000+ | 0.28 EUR |
| 4500+ | 0.27 EUR |
| 7500+ | 0.25 EUR |
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Technische Details NTTFS4C08NTAG onsemi
Description: MOSFET N-CH 30V 9.3A 8WDFN, Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 820mW (Ta), 25.5W (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTTFS4C08NTAG nach Preis ab 0.35 EUR bis 1.18 EUR
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NTTFS4C08NTAG | onsemi |
MOSFET Pwr MOSFET 30V 52A 5.9mOhm SGL N-CH |
auf Bestellung 962 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4C08NTAG | onsemi |
Description: MOSFET N-CH 30V 9.3A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 820mW (Ta), 25.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V |
auf Bestellung 9351 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTTFS4C08NTAG | ON Semiconductor |
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auf Bestellung 1380 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTTFS4C08NTAG |
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Hersteller: onsemi
MOSFET Pwr MOSFET 30V 52A 5.9mOhm SGL N-CH
MOSFET Pwr MOSFET 30V 52A 5.9mOhm SGL N-CH
auf Bestellung 962 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 0.98 EUR |
| 10+ | 0.84 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.51 EUR |
| 1500+ | 0.43 EUR |
| 3000+ | 0.36 EUR |
| 9000+ | 0.35 EUR |
| NTTFS4C08NTAG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.3A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 820mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
Description: MOSFET N-CH 30V 9.3A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Power Dissipation (Max): 820mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
auf Bestellung 9351 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.18 EUR |
| 24+ | 0.74 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.36 EUR |
| NTTFS4C08NTAG |
![]() |
Hersteller: ON Semiconductor
auf Bestellung 1380 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
