NTTFS4C08NTWG onsemi

Description: MOSFET N-CH 30V 9.3A 8WDFN, Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 820mW (Ta), 25.5W (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).