| Anzahl | Preis |
|---|---|
| 2+ | 1.49 EUR |
| 10+ | 1.22 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.62 EUR |
| 5000+ | 0.59 EUR |
| 10000+ | 0.58 EUR |
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Technische Details NTTFS4C10NTWG onsemi
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 790mW (Ta), 23.6W (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V.
Weitere Produktangebote NTTFS4C10NTWG nach Preis ab 1 EUR bis 2.39 EUR
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NTTFS4C10NTWG | onsemi |
 Description: MOSFET N-CH 30V 8.2A/44A 8WDFNInput Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 790mW (Ta), 23.6W (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 405 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTTFS4C10NTWG |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 405 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.39 EUR |
| 12+ | 1.51 EUR |
| 100+ | 1 EUR |