NTTFS4C13NTAG onsemi

Description: MOSFET N-CH 30V 7.2A 8WDFN, Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 780mW (Ta), 21.5W (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).