NTTFS4D9N04XMTAG onsemi
Hersteller: onsemiDescription: MOSFET - POWER, SINGLN-CHANNEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 668 pF @ 20 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.41 EUR |
| 3000+ | 0.38 EUR |
| 4500+ | 0.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTTFS4D9N04XMTAG onsemi
Description: MOSFET - POWER, SINGLN-CHANNEL,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 65A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 10A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 30µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 668 pF @ 20 V.
Weitere Produktangebote NTTFS4D9N04XMTAG nach Preis ab 0.36 EUR bis 1.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NTTFS4D9N04XMTAG | Hersteller : onsemi |
Description: MOSFET - POWER, SINGLN-CHANNEL, Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 10A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 668 pF @ 20 V |
auf Bestellung 5947 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
NTTFS4D9N04XMTAG | Hersteller : onsemi |
MOSFETs 40V T10M IN U8FL PACKAGE |
auf Bestellung 1012 Stücke: Lieferzeit 10-14 Tag (e) |
|