NTTFS5D9N08HTWG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 13A/84A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 23A, 10V
Power Dissipation (Max): 2.7W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 40 V
Description: MOSFET N-CH 80V 13A/84A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 23A, 10V
Power Dissipation (Max): 2.7W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 40 V
auf Bestellung 2054 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.38 EUR |
10+ | 2.81 EUR |
100+ | 2.24 EUR |
500+ | 1.89 EUR |
1000+ | 1.61 EUR |
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Produktbewertung abgeben
Technische Details NTTFS5D9N08HTWG onsemi
Description: MOSFET N-CH 80V 13A/84A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 84A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 23A, 10V, Power Dissipation (Max): 2.7W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 120µA, Supplier Device Package: 8-PQFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 40 V.
Weitere Produktangebote NTTFS5D9N08HTWG nach Preis ab 2.24 EUR bis 4.52 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NTTFS5D9N08HTWG | Hersteller : onsemi | MOSFET T8 80V DFN POWER CLIP 3X3 |
auf Bestellung 1392 Stücke: Lieferzeit 14-28 Tag (e) |
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NTTFS5D9N08HTWG | Hersteller : ON Semiconductor | Trans MOSFET N-CH 80V 13A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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NTTFS5D9N08HTWG | Hersteller : onsemi |
Description: MOSFET N-CH 80V 13A/84A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 84A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 23A, 10V Power Dissipation (Max): 2.7W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: 8-PQFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 40 V |
Produkt ist nicht verfügbar |