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NTTFSS1D1N02P1E

NTTFSS1D1N02P1E onsemi

nttfss1d1n02p1e-d.pdf Hersteller: onsemi
Description: 25V PT11E IN 3X3 SD PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 27A, 10V
Power Dissipation (Max): 2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 934µA
Supplier Device Package: 9-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 13 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.51 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTTFSS1D1N02P1E onsemi

Description: 25V PT11E IN 3X3 SD PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 9-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 264A (Tc), Rds On (Max) @ Id, Vgs: 0.85mOhm @ 27A, 10V, Power Dissipation (Max): 2W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2V @ 934µA, Supplier Device Package: 9-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 13 V.

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NTTFSS1D1N02P1E NTTFSS1D1N02P1E Hersteller : onsemi nttfss1d1n02p1e-d.pdf Description: 25V PT11E IN 3X3 SD PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 27A, 10V
Power Dissipation (Max): 2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 934µA
Supplier Device Package: 9-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 13 V
auf Bestellung 5880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.82 EUR
10+3.12 EUR
100+2.16 EUR
500+1.74 EUR
1000+1.61 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NTTFSS1D1N02P1E Hersteller : ONSEMI nttfss1d1n02p1e-d.pdf NTTFSS1D1N02P1E SMD N channel transistors
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