NTTFSS1D1N02P1E onsemi
Hersteller: onsemi
Description: 25V PT11E IN 3X3 SD PACKAGE
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 9-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 934µA
Power Dissipation (Max): 2W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 264A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.51 EUR |
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Technische Details NTTFSS1D1N02P1E onsemi
Description: 25V PT11E IN 3X3 SD PACKAGE, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 9-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2V @ 934µA, Power Dissipation (Max): 2W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 0.85mOhm @ 27A, 10V, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 264A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 9-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTTFSS1D1N02P1E nach Preis ab 1.61 EUR bis 4.82 EUR
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NTTFSS1D1N02P1E | onsemi |
Description: 25V PT11E IN 3X3 SD PACKAGE Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 13 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 9-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 934µA Power Dissipation (Max): 2W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 264A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 5880 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTTFSS1D1N02P1E |
|
Hersteller: onsemi
Description: 25V PT11E IN 3X3 SD PACKAGE
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 9-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 934µA
Power Dissipation (Max): 2W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 264A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Cut Tape (CT)
Description: 25V PT11E IN 3X3 SD PACKAGE
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 9-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 934µA
Power Dissipation (Max): 2W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 264A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 5880 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.82 EUR |
| 10+ | 3.12 EUR |
| 100+ | 2.16 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.61 EUR |