NTZD3152PT1G onsemi
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 0.43A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 430mA
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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Technische Details NTZD3152PT1G onsemi
Description: MOSFET 2P-CH 20V 0.43A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 430mA, Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V, Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active.
Weitere Produktangebote NTZD3152PT1G nach Preis ab 0.11 EUR bis 0.57 EUR
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NTZD3152PT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.43A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1830 Stücke: Lieferzeit 14-21 Tag (e) |
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NTZD3152PT1G | onsemi |
Description: MOSFET 2P-CH 20V 0.43A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 430mA Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 13894 Stücke: Lieferzeit 10-14 Tag (e) |
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NTZD3152PT1G | onsemi |
MOSFETs -20V -430mA Dual P-Channel |
auf Bestellung 110335 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTZD3152PT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1830 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 271+ | 0.26 EUR |
| 472+ | 0.15 EUR |
| 521+ | 0.14 EUR |
| NTZD3152PT1G |
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Hersteller: onsemi
Description: MOSFET 2P-CH 20V 0.43A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 430mA
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET 2P-CH 20V 0.43A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 430mA
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 13894 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 0.56 EUR |
| 50+ | 0.35 EUR |
| 100+ | 0.22 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.13 EUR |
| NTZD3152PT1G |
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Hersteller: onsemi
MOSFETs -20V -430mA Dual P-Channel
MOSFETs -20V -430mA Dual P-Channel
auf Bestellung 110335 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.57 EUR |
| 11+ | 0.26 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.12 EUR |
| 4000+ | 0.11 EUR |