NTZD3155CT2G ONSEMI
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Power dissipation: 0.25W
Case: SOT563F
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20/-20V
Kind of channel: enhancement
Version: ESD
Drain current: 0.39/-0.31A
On-state resistance: 0.55/0.9Ω
Gate-source voltage: ±6V
| Anzahl | Privatkunde |
|---|---|
| 162+ | 0.52 EUR |
| 250+ | 0.35 EUR |
| 325+ | 0.26 EUR |
| 472+ | 0.18 EUR |
| 610+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTZD3155CT2G ONSEMI
Description: MOSFET N/P-CH 20V 0.54A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA, Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V, Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active.
Weitere Produktangebote NTZD3155CT2G nach Preis ab 0.13 EUR bis 0.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTZD3155CT2G | onsemi |
Description: MOSFET N/P-CH 20V 0.54A SOT563 Part Status: Active Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Drain to Source Voltage (Vdss): 20V Power - Max: 250mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
NTZD3155CT2G | onsemi |
MOSFETs COMP 540mA 20V |
auf Bestellung 55077 Stücke: Lieferzeit 374-378 Tag (e) |
|
| NTZD3155CT2G |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 0.54A SOT563
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 20V 0.54A SOT563
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| NTZD3155CT2G |
|
Hersteller: onsemi
MOSFETs COMP 540mA 20V
MOSFETs COMP 540mA 20V
auf Bestellung 55077 Stücke:
Lieferzeit 374-378 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.7 EUR |
| 10+ | 0.43 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.18 EUR |
| 4000+ | 0.13 EUR |