NTZD5110NT1G ON Semiconductor
auf Bestellung 7689 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1467+ | 0.11 EUR |
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Technische Details NTZD5110NT1G ON Semiconductor
Description: MOSFET 2N-CH 60V 0.294A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 294mA, Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-563.
Weitere Produktangebote NTZD5110NT1G nach Preis ab 0.073 EUR bis 0.89 EUR
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NTZD5110NT1G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 60V 0.294A 6-Pin SOT-563 T/R |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTZD5110NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 60V 0.294A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 294mA Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 |
auf Bestellung 16768 Stücke: Lieferzeit 21-28 Tag (e) |
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NTZD5110NT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.294A 6-Pin SOT-563 T/R |
auf Bestellung 7689 Stücke: Lieferzeit 14-21 Tag (e) |
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NTZD5110NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 60V 0.294A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 294mA Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 |
auf Bestellung 16768 Stücke: Lieferzeit 21-28 Tag (e) |
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NTZD5110NT1G | Hersteller : onsemi |
MOSFET SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH |
auf Bestellung 394339 Stücke: Lieferzeit 14-28 Tag (e) |
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NTZD5110NT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.294A 6-Pin SOT-563 T/R |
Produkt ist nicht verfügbar |
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NTZD5110NT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.294A 6-Pin SOT-563 T/R |
Produkt ist nicht verfügbar |
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NTZD5110NT1G | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.225A Power dissipation: 0.28W Case: SOT563F Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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NTZD5110NT1G | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.225A Power dissipation: 0.28W Case: SOT563F Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |