NTZD5110NT1G onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 0.294A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 294mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.13 EUR |
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Technische Details NTZD5110NT1G onsemi
Description: MOSFET 2N-CH 60V 0.294A SOT563, Supplier Device Package: SOT-563, Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 294mA, Drain to Source Voltage (Vdss): 60V, Power - Max: 250mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTZD5110NT1G nach Preis ab 0.097 EUR bis 0.62 EUR
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NTZD5110NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET x2 Kind of package: reel; tape Mounting: SMD Case: SOT563F Drain current: 0.225A Power dissipation: 0.28W On-state resistance: 1.6Ω Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar |
auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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NTZD5110NT1G | onsemi |
MOSFETs SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH |
auf Bestellung 223151 Stücke: Lieferzeit 10-14 Tag (e) |
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NTZD5110NT1G | onsemi |
Description: MOSFET 2N-CH 60V 0.294A SOT563 Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Current - Continuous Drain (Id) @ 25°C: 294mA Drain to Source Voltage (Vdss): 60V Power - Max: 250mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 6770 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTZD5110NT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563F
Drain current: 0.225A
Power dissipation: 0.28W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563F
Drain current: 0.225A
Power dissipation: 0.28W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 421+ | 0.17 EUR |
| 569+ | 0.13 EUR |
| 685+ | 0.1 EUR |
| 1000+ | 0.097 EUR |
| NTZD5110NT1G |
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Hersteller: onsemi
MOSFETs SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH
MOSFETs SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH
auf Bestellung 223151 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 0.59 EUR |
| 10+ | 0.37 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.13 EUR |
| 4000+ | 0.11 EUR |
| NTZD5110NT1G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 60V 0.294A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 294mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 0.294A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 294mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 6770 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 47+ | 0.38 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| 2000+ | 0.14 EUR |