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NTZS3151PT1H

NTZS3151PT1H onsemi

ntzs3151p-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 20V 860MA SOT563-6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 170mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V
auf Bestellung 151765 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3328+0.21 EUR
Mindestbestellmenge: 3328
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Technische Details NTZS3151PT1H onsemi

Description: MOSFET P-CH 20V 860MA SOT563-6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 860mA (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V, Power Dissipation (Max): 170mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V.

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NTZS3151PT1H NTZS3151PT1H Hersteller : ON Semiconductor NTZS3151P-D-260443.pdf MOSFET PFET SOT563 20V 950MA TR
auf Bestellung 455 Stücke:
Lieferzeit 14-28 Tag (e)
NTZS3151PT1H ntzs3151p-d.pdf
auf Bestellung 870 Stücke:
Lieferzeit 21-28 Tag (e)
NTZS3151PT1H Hersteller : ONSEMI ONSMS25795-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - NTZS3151PT1H - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 151765 Stücke:
Lieferzeit 14-21 Tag (e)
NTZS3151PT1H NTZS3151PT1H Hersteller : onsemi ntzs3151p-d.pdf Description: MOSFET P-CH 20V 860MA SOT563-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 170mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V
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