Technische Details NVATS5A302PLZT4G ON Semiconductor
Description: MOSFET P-CHANNEL 60V 80A ATPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 35A, 10V, Power Dissipation (Max): 84W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: ATPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote NVATS5A302PLZT4G
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NVATS5A302PLZT4G | Hersteller : onsemi |
Description: MOSFET P-CHANNEL 60V 80A ATPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 35A, 10V Power Dissipation (Max): 84W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: ATPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVATS5A302PLZT4G | Hersteller : ON Semiconductor | MOSFET P-Channel Power MOSFET, -60V, -80A, 13m |
Produkt ist nicht verfügbar |