NVATS68301PZT4G ON Semiconductor
auf Bestellung 492 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details NVATS68301PZT4G ON Semiconductor
Description: MOSFET P-CHANNEL 100V 31A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 14A, 10V, Power Dissipation (Max): 84W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: DPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 20 V, Qualification: AEC-Q101.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVATS68301PZT4G | Hersteller : ON Semiconductor |
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auf Bestellung 1130 Stücke: Lieferzeit 21-28 Tag (e) |
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NVATS68301PZT4G | Hersteller : onsemi |
Description: MOSFET P-CHANNEL 100V 31A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 14A, 10V Power Dissipation (Max): 84W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 20 V Qualification: AEC-Q101 |
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