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NVB082N65S3F

NVB082N65S3F onsemi

nvb082n65s3f-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 650V 40A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+8.88 EUR
Mindestbestellmenge: 800
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Technische Details NVB082N65S3F onsemi

Description: MOSFET N-CH 650V 40A D2PAK-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V, Power Dissipation (Max): 313W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V, Qualification: AEC-Q101.

Weitere Produktangebote NVB082N65S3F nach Preis ab 10.06 EUR bis 20.64 EUR

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NVB082N65S3F NVB082N65S3F Hersteller : onsemi nvb082n65s3f-d.pdf Description: MOSFET N-CH 650V 40A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.1 EUR
10+ 12.07 EUR
100+ 10.06 EUR
Mindestbestellmenge: 2
NVB082N65S3F NVB082N65S3F Hersteller : onsemi NVB082N65S3F_D-2319344.pdf MOSFET SUPERFET3 650V D2PAK PKG
auf Bestellung 19 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
3+20.64 EUR
10+ 17.71 EUR
25+ 16.07 EUR
100+ 14.74 EUR
250+ 13.88 EUR
500+ 13 EUR
800+ 11.7 EUR
Mindestbestellmenge: 3
NVB082N65S3F Hersteller : ON Semiconductor nvb082n65s3f-d.pdf
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
NVB082N65S3F NVB082N65S3F Hersteller : ON Semiconductor nvb082n65s3f-d.pdf Trans MOSFET N-CH 650V 40A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
NVB082N65S3F NVB082N65S3F Hersteller : ON Semiconductor nvb082n65s3f-d.pdf Trans MOSFET N-CH 650V 40A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
NVB082N65S3F NVB082N65S3F Hersteller : ON Semiconductor nvb082n65s3f-d.pdf Trans MOSFET N-CH 650V 40A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar