Produkte > ONSEMI > NVB125N65S3
NVB125N65S3

NVB125N65S3 onsemi


nvb125n65s3-d.pdf Hersteller: onsemi
Description: SF3 650V EASY 125MOHM D2PAK AUTO
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 642 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.51 EUR
10+5 EUR
100+3.56 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NVB125N65S3 onsemi

Description: SF3 650V EASY 125MOHM D2PAK AUTO, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 181W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 590µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V, Qualification: AEC-Q101.

Weitere Produktangebote NVB125N65S3 nach Preis ab 2.87 EUR bis 6.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NVB125N65S3 NVB125N65S3 Hersteller : onsemi nvb125n65s3-d.pdf MOSFETs SF3 650V EASY 125MOHM D2PAK AUTO
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.53 EUR
10+5.02 EUR
100+3.57 EUR
500+2.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVB125N65S3 Hersteller : ON Semiconductor nvb125n65s3-d.pdf MOSFET Power, N Channel, Automotive, Easy drive, 650 V, 24 A, 125 m
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVB125N65S3 Hersteller : ON Semiconductor nvb125n65s3-d.pdf MOSFET Power, N Channel, Automotive AEC-Q101, Easy drive, 650 V, 24 A, 125 m
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVB125N65S3 Hersteller : ONSEMI nvb125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVB125N65S3 NVB125N65S3 Hersteller : onsemi nvb125n65s3-d.pdf Description: SF3 650V EASY 125MOHM D2PAK AUTO
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVB125N65S3 Hersteller : ONSEMI nvb125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH