auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.58 EUR |
| 10+ | 5.02 EUR |
| 100+ | 3.57 EUR |
| 500+ | 3.15 EUR |
| 800+ | 2.87 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVB125N65S3 onsemi
Description: SF3 650V EASY 125MOHM D2PAK AUTO, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 181W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 590µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVB125N65S3 nach Preis ab 3.58 EUR bis 7.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NVB125N65S3 | Hersteller : onsemi |
 Description: SF3 650V EASY 125MOHM D2PAK AUTOPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 590µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 622 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVB125N65S3 | Hersteller : ON Semiconductor |
MOSFET Power, N Channel, Automotive, Easy drive, 650 V, 24 A, 125 m |
Produkt ist nicht verfügbar |
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| NVB125N65S3 | Hersteller : ON Semiconductor |
MOSFET Power, N Channel, Automotive AEC-Q101, Easy drive, 650 V, 24 A, 125 m |
Produkt ist nicht verfügbar |
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NVB125N65S3 | Hersteller : onsemi |
Description: SF3 650V EASY 125MOHM D2PAK AUTO Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 590µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVB125N65S3 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |