NVB5405NT4G onsemi

Description: NVB5405 - SINGLE N-CHANNEL POWER, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 3W (Ta), 150W (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 116A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk.