NVB6412ANT4G ON Semiconductor
auf Bestellung 548 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 77+ | 1.91 EUR |
| 80+ | 1.78 EUR |
| 84+ | 1.62 EUR |
| 86+ | 1.52 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.32 EUR |
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Technische Details NVB6412ANT4G ON Semiconductor
Description: MOSFET N-CH 100V 58A D2PAK-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVB6412ANT4G nach Preis ab 1.32 EUR bis 1.91 EUR
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NVB6412ANT4G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 100V 58A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 548 Stücke: Lieferzeit 14-21 Tag (e) |
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NVB6412ANT4G | Hersteller : ON Semiconductor |
MOSFET NFET D2PAK 100V 59A 20MO |
auf Bestellung 1016 Stücke: Lieferzeit 10-14 Tag (e) |
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NVB6412ANT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 58A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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NVB6412ANT4G | Hersteller : onsemi |
Description: MOSFET N-CH 100V 58A D2PAK-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |