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NVBG015N065SC1

NVBG015N065SC1 onsemi

NVBG015N065SC1_D-2319397.pdf Hersteller: onsemi
MOSFET SIC MOS D2PAK-7L 650V
auf Bestellung 558 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+103.44 EUR
10+ 94.04 EUR
25+ 92.65 EUR
50+ 91.66 EUR
100+ 84.62 EUR
250+ 83.23 EUR
500+ 80.29 EUR
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Technische Details NVBG015N065SC1 onsemi

Description: SIC MOS D2PAK-7L 650V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 145A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 25mA, Supplier Device Package: D2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVBG015N065SC1 nach Preis ab 86.14 EUR bis 105.28 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NVBG015N065SC1 NVBG015N065SC1 Hersteller : onsemi nvbg015n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 737 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+105.28 EUR
10+ 95.72 EUR
100+ 86.14 EUR
NVBG015N065SC1 Hersteller : ON Semiconductor nvbg015n065sc1-d.pdf Trans MOSFET N-CH SiC 650V 145A Automotive T/R
Produkt ist nicht verfügbar
NVBG015N065SC1 NVBG015N065SC1 Hersteller : ON Semiconductor nvbg015n065sc1-d.pdf Trans MOSFET N-CH SiC 650V 145A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
Produkt ist nicht verfügbar
NVBG015N065SC1 NVBG015N065SC1 Hersteller : ON Semiconductor nvbg015n065sc1-d.pdf Trans MOSFET N-CH SiC 650V 145A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
Produkt ist nicht verfügbar
NVBG015N065SC1 NVBG015N065SC1 Hersteller : onsemi nvbg015n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar