NVBG015N065SC1 onsemi
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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Technische Details NVBG015N065SC1 onsemi
Description: SIC MOS D2PAK-7L 650V, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V, Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +22V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Grade: Automotive, Supplier Device Package: D2PAK-7, Vgs(th) (Max) @ Id: 4.3V @ 25mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V, Current - Continuous Drain (Id) @ 25°C: 145A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVBG015N065SC1 nach Preis ab 41.34 EUR bis 54.75 EUR
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NVBG015N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650V Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Grade: Automotive Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.3V @ 25mA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
auf Bestellung 219673 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG015N065SC1 | onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 650V |
auf Bestellung 495 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVBG015N065SC1 | ONN |
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auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVBG015N065SC1 |
|
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SIC MOS D2PAK-7L 650V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 219673 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.63 EUR |
| 10+ | 44.15 EUR |
| NVBG015N065SC1 |
|
Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 650V
SiC MOSFETs SIC MOS D2PAK-7L 650V
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.75 EUR |
| 10+ | 44.28 EUR |
| 100+ | 44.14 EUR |
| 500+ | 42.64 EUR |
| 800+ | 41.34 EUR |
| NVBG015N065SC1 |
|
Hersteller: ONN
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)