NVBG015N065SC1 onsemi
Hersteller: onsemiDescription: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 219200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 40.2 EUR |
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Technische Details NVBG015N065SC1 onsemi
Description: SIC MOS D2PAK-7L 650V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 145A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 25mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG015N065SC1 nach Preis ab 41.34 EUR bis 54.75 EUR
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NVBG015N065SC1 | Hersteller : onsemi |
Description: SIC MOS D2PAK-7L 650V Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 25mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V Qualification: AEC-Q101 |
auf Bestellung 219673 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG015N065SC1 | Hersteller : onsemi |
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NVBG015N065SC1 | Hersteller : ON Semiconductor |
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| NVBG015N065SC1 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 442A; 250W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 103A Pulsed drain current: 442A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 16mΩ Mounting: SMD Gate charge: 283nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |