NVBG020N090SC1 onsemi
Hersteller: onsemiDescription: SICFET N-CH 900V 9.8A/112A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
Power Dissipation (Max): 3.7W (Ta), 477W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
Qualification: AEC-Q101
auf Bestellung 12800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 76.33 EUR |
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Technische Details NVBG020N090SC1 onsemi
Description: SICFET N-CH 900V 9.8A/112A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V, Power Dissipation (Max): 3.7W (Ta), 477W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 20mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -10V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG020N090SC1 nach Preis ab 94.43 EUR bis 149.97 EUR
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NVBG020N090SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 900V 9.8A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG020N090SC1 | Hersteller : onsemi |
Description: SICFET N-CH 900V 9.8A/112A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 112A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V Power Dissipation (Max): 3.7W (Ta), 477W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -10V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V Qualification: AEC-Q101 |
auf Bestellung 13428 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG020N090SC1 | Hersteller : onsemi |
MOSFET 20MOHM 900V |
auf Bestellung 716 Stücke: Lieferzeit 14-28 Tag (e) |
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NVBG020N090SC1 | Hersteller : ONSEMI |
Description: ONSEMI - NVBG020N090SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 112 A, 900 V, 0.02 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 900V rohsCompliant: Y-EX Dauer-Drainstrom Id: 112A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 477W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm |
auf Bestellung 629 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG020N090SC1 | Hersteller : ONSEMI |
Description: ONSEMI - NVBG020N090SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 112 A, 900 V, 0.02 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 900V rohsCompliant: Y-EX Dauer-Drainstrom Id: 112A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 477W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm |
auf Bestellung 629 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVBG020N090SC1 | Hersteller : ON Semiconductor |
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auf Bestellung 14 Stücke: Lieferzeit 21-28 Tag (e) |
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NVBG020N090SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 900V 9.8A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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NVBG020N090SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 900V 9.8A 8-Pin(7+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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NVBG020N090SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 900V 9.8A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |