NVBG020N120SC1 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101
Description: MOSFET N-CH 1200V 8.6A/98A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Power Dissipation (Max): 3.7W (Ta), 468W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 108.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVBG020N120SC1 onsemi
Description: MOSFET N-CH 1200V 8.6A/98A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V, Power Dissipation (Max): 3.7W (Ta), 468W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 20mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG020N120SC1 nach Preis ab 128.42 EUR bis 195.23 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NVBG020N120SC1 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 1.2KV 8.6A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG020N120SC1 | Hersteller : onsemi |
Description: MOSFET N-CH 1200V 8.6A/98A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V Power Dissipation (Max): 3.7W (Ta), 468W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 12754 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG020N120SC1 | Hersteller : onsemi | MOSFET SIC MOS D2PAK-7L 20MOHM 1 |
auf Bestellung 779 Stücke: Lieferzeit 14-28 Tag (e) |
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NVBG020N120SC1 | Hersteller : ONSEMI |
Description: ONSEMI - NVBG020N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 98 A, 1.2 kV, 0.02 ohm, TO-263 (D2PAK) tariffCode: 85415000 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 98A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 468W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm |
auf Bestellung 742 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG020N120SC1 | Hersteller : ONSEMI |
Description: ONSEMI - NVBG020N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 98 A, 1.2 kV, 0.02 ohm, TO-263 (D2PAK) tariffCode: 85415000 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 98A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 468W Gate-Source-Schwellenspannung, max.: 2.7V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 468W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.02ohm Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm |
auf Bestellung 742 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG020N120SC1 | Hersteller : ON Semiconductor |
auf Bestellung 671 Stücke: Lieferzeit 21-28 Tag (e) |
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NVBG020N120SC1 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 1.2KV 8.6A Automotive T/R |
Produkt ist nicht verfügbar |
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NVBG020N120SC1 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 1.2KV 8.6A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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NVBG020N120SC1 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 1.2KV 8.6A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |