NVBG022N120M3S onsemi
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 22MOHM 1200V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 800+ | 25.24 EUR |
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Technische Details NVBG022N120M3S onsemi
Description: SIC MOS D2PAK-7L 22MOHM 1200V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Drive Voltage (Max Rds On, Min Rds On): 18V, Grade: Automotive, Supplier Device Package: D2PAK-7, Vgs(th) (Max) @ Id: 4.4V @ 20mA, Power Dissipation (Max): 234W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR), Qualification: AEC-Q101.
Weitere Produktangebote NVBG022N120M3S nach Preis ab 28.92 EUR bis 43.86 EUR
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NVBG022N120M3S | onsemi |
Description: SIC MOS D2PAK-7L 22MOHM 1200V Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 27786 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG022N120M3S | onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 22MOHM 1200V |
auf Bestellung 565 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVBG022N120M3S | ONN |
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auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVBG022N120M3S |
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Hersteller: onsemi
Description: SIC MOS D2PAK-7L 22MOHM 1200V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 22MOHM 1200V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 27786 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 41.17 EUR |
| 10+ | 30.89 EUR |
| NVBG022N120M3S |
|
Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 22MOHM 1200V
SiC MOSFETs SIC MOS D2PAK-7L 22MOHM 1200V
auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 43.86 EUR |
| 10+ | 31.98 EUR |
| 100+ | 30.76 EUR |
| 500+ | 28.92 EUR |
| NVBG022N120M3S |
|
Hersteller: ONN
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH