Produkte > ONSEMI > NVBG025N065SC1
NVBG025N065SC1

NVBG025N065SC1 onsemi

nvbg025n065sc1-d.pdf Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+29.05 EUR
Mindestbestellmenge: 800
Produktrezensionen
Produktbewertung abgeben

Technische Details NVBG025N065SC1 onsemi

Description: SIC MOS D2PAK-7L 650V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V, Power Dissipation (Max): 395W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 15.5mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V, Qualification: AEC-Q101.

Weitere Produktangebote NVBG025N065SC1 nach Preis ab 34.05 EUR bis 67.94 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NVBG025N065SC1 NVBG025N065SC1 Hersteller : onsemi nvbg025n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+43.81 EUR
10+ 38.93 EUR
100+ 34.05 EUR
NVBG025N065SC1 NVBG025N065SC1 Hersteller : ON Semiconductor nvbg025n065sc1-d.pdf Silicon Carbide MOSFET,19mohm,650V Automotive AEC-Q101
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+53.2 EUR
Mindestbestellmenge: 3
NVBG025N065SC1 NVBG025N065SC1 Hersteller : ON Semiconductor nvbg025n065sc1-d.pdf Silicon Carbide MOSFET,19mohm,650V Automotive AEC-Q101
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+53.2 EUR
Mindestbestellmenge: 3
NVBG025N065SC1 NVBG025N065SC1 Hersteller : onsemi NVBG025N065SC1_D-3150545.pdf MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK-7L
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+67.94 EUR
10+ 61.35 EUR
25+ 59.33 EUR
100+ 54.96 EUR
250+ 53.35 EUR
500+ 50.62 EUR
800+ 49.84 EUR
NVBG025N065SC1 Hersteller : ON Semiconductor nvbg025n065sc1-d.pdf NVBG025N065SC1
Produkt ist nicht verfügbar