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NVBG025N065SC1

NVBG025N065SC1 onsemi

nvbg025n065sc1-d.pdf
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+25.5 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVBG025N065SC1 onsemi

Description: SIC MOS D2PAK-7L 650V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V, Power Dissipation (Max): 395W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 15.5mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V, Qualification: AEC-Q101.

Weitere Produktangebote NVBG025N065SC1 nach Preis ab 29.5 EUR bis 44.26 EUR

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NVBG025N065SC1 NVBG025N065SC1 onsemi nvbg025n065sc1-d.pdf SiC MOSFETs SIC MOS D2PAK-7L 650V
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
1+43.68 EUR
10+32.7 EUR
100+31.59 EUR
500+29.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG025N065SC1 NVBG025N065SC1 onsemi nvbg025n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 1590 Stücke:
Lieferzeit 10-14 Tag (e)
1+44.26 EUR
10+32.3 EUR
100+31.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG025N065SC1 nvbg025n065sc1-d.pdf
NVBG025N065SC1
Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 650V
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43.68 EUR
10+32.7 EUR
100+31.59 EUR
500+29.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG025N065SC1 nvbg025n065sc1-d.pdf
NVBG025N065SC1
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 1590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+44.26 EUR
10+32.3 EUR
100+31.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH