NVBG030N120M3S-IE onsemi
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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Technische Details NVBG030N120M3S-IE onsemi
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, Grade: Automotive, Supplier Device Package: D2PAK-7, Vgs(th) (Max) @ Id: 4.4V @ 15mA, Power Dissipation (Max): 348W (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVBG030N120M3S-IE nach Preis ab 25.83 EUR bis 38.24 EUR
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NVBG030N120M3S-IE | onsemi |
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Grade: Automotive Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.4V @ 15mA Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVBG030N120M3S-IE |
|
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 38.24 EUR |
| 10+ | 30.74 EUR |
| 25+ | 28.87 EUR |
| 100+ | 26.81 EUR |
| 250+ | 25.83 EUR |