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NVBG030N120M3S

NVBG030N120M3S onsemi


NVBG030N120M3S-D.PDF Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+25.8 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVBG030N120M3S onsemi

Description: SILICON CARBIDE (SIC) MOSFET - E, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V, Power Dissipation (Max): 348W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 15mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V, Qualification: AEC-Q101.

Weitere Produktangebote NVBG030N120M3S nach Preis ab 26.22 EUR bis 52.31 EUR

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Preis
NVBG030N120M3S NVBG030N120M3S Hersteller : onsemi NVBG030N120M3S-D.PDF SiC MOSFETs SIC MOS D2PAK-7L 30MOHM 1200V M3
auf Bestellung 761 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.86 EUR
10+31.8 EUR
100+28.11 EUR
500+28.09 EUR
800+26.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG030N120M3S NVBG030N120M3S Hersteller : onsemi NVBG030N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 20728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+39 EUR
10+30.46 EUR
100+27.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG030N120M3S NVBG030N120M3S Hersteller : ON Semiconductor nvbg030n120m3s-d.pdf Trans MOSFET N-CH SiC 1.2KV 77A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+52.31 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NVBG030N120M3S Hersteller : ON Semiconductor nvbg030n120m3s-d.pdf SiC MOS D2PAK-7L 30mohm 1200V M3
Produkt ist nicht verfügbar
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NVBG030N120M3S NVBG030N120M3S Hersteller : ON Semiconductor nvbg030n120m3s-d.pdf Trans MOSFET N-CH SiC 1.2KV 77A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVBG030N120M3S NVBG030N120M3S Hersteller : ON Semiconductor nvbg030n120m3s-d.pdf Trans MOSFET N-CH SiC 1.2KV 77A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
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NVBG030N120M3S Hersteller : ONSEMI NVBG030N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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NVBG030N120M3S Hersteller : ONSEMI NVBG030N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH