NVBG032N065M3S onsemi
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Qualification: AEC-Q101
Produktrezensionen
Produktbewertung abgeben
Technische Details NVBG032N065M3S onsemi
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 7.5mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG032N065M3S nach Preis ab 13.99 EUR bis 25.97 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NVBG032N065M3S | ONSEMI |
Description: ONSEMI - NVBG032N065M3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 52 A, 650 V, 0.044 ohm, TO-263HV (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 52A hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263HV (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: EliteSiC Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.044ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
NVBG032N065M3S | ONSEMI |
Description: ONSEMI - NVBG032N065M3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 52 A, 650 V, 0.044 ohm, TO-263HV (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 52A hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.044ohm |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
NVBG032N065M3S | onsemi |
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 1518 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
NVBG032N065M3S | onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 32MOHM 650V M3S |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVBG032N065M3S |
|
Hersteller: ONSEMI
Description: ONSEMI - NVBG032N065M3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 52 A, 650 V, 0.044 ohm, TO-263HV (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 52A
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: TO-263HV (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.044ohm
SVHC: No SVHC (27-Jun-2024)
Description: ONSEMI - NVBG032N065M3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 52 A, 650 V, 0.044 ohm, TO-263HV (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 52A
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: TO-263HV (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.044ohm
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 24.04 EUR |
| 11+ | 20.73 EUR |
| 50+ | 19.34 EUR |
| 100+ | 17.95 EUR |
| 250+ | 17.37 EUR |
| NVBG032N065M3S |
|
Hersteller: ONSEMI
Description: ONSEMI - NVBG032N065M3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 52 A, 650 V, 0.044 ohm, TO-263HV (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 52A
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 200W
Anzahl der Pins: 7Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.044ohm
Description: ONSEMI - NVBG032N065M3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 52 A, 650 V, 0.044 ohm, TO-263HV (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 52A
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 200W
Anzahl der Pins: 7Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.044ohm
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 24.04 EUR |
| 11+ | 20.73 EUR |
| 50+ | 19.34 EUR |
| 100+ | 17.95 EUR |
| 250+ | 17.37 EUR |
| NVBG032N065M3S |
|
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 1518 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.38 EUR |
| 10+ | 17.06 EUR |
| 100+ | 15.04 EUR |
| NVBG032N065M3S |
|
Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 32MOHM 650V M3S
SiC MOSFETs SIC MOS D2PAK-7L 32MOHM 650V M3S
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.97 EUR |
| 10+ | 18.2 EUR |
| 100+ | 14.99 EUR |
| 500+ | 13.99 EUR |