Weitere Produktangebote NVBG040N120SC1 nach Preis ab 30.98 EUR bis 71.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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NVBG040N120SC1 | onsemi |
 Description: TRANS SJT N-CH 1200V 60A D2PAK-7Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG040N120SC1 | onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 40MOHM 1200V |
auf Bestellung 53 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG040N120SC1 | onsemi |
Description: TRANS SJT N-CH 1200V 60A D2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 1843 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG040N120SC1 | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG040N120SC1 | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG040N120SC1 | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVBG040N120SC1 | ON Semiconductor |
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auf Bestellung 135 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVBG040N120SC1 |
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Hersteller: onsemi
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 30.98 EUR |
| NVBG040N120SC1 |
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Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 40MOHM 1200V
SiC MOSFETs SIC MOS D2PAK-7L 40MOHM 1200V
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 52.72 EUR |
| 10+ | 38.58 EUR |
| 100+ | 36.76 EUR |
| 500+ | 32.42 EUR |
| NVBG040N120SC1 |
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Hersteller: onsemi
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1843 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 53.88 EUR |
| 10+ | 39.31 EUR |
| 100+ | 37.91 EUR |
| NVBG040N120SC1 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 63.43 EUR |
| 10+ | 59.62 EUR |
| 25+ | 53.42 EUR |
| NVBG040N120SC1 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 63.43 EUR |
| 10+ | 60.94 EUR |
| 25+ | 55.48 EUR |
| NVBG040N120SC1 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 71.48 EUR |
| NVBG040N120SC1 |
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Hersteller: ON Semiconductor
auf Bestellung 135 Stücke:
Lieferzeit 21-28 Tag (e)