NVBG060N065SC1 onsemi
Hersteller: onsemiDescription: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 16.56 EUR |
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Technische Details NVBG060N065SC1 onsemi
Description: SIC MOS D2PAK-7L 650V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 6.5mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG060N065SC1 nach Preis ab 14.01 EUR bis 24.73 EUR
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NVBG060N065SC1 | Hersteller : onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 650V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG060N065SC1 | Hersteller : onsemi |
Description: SIC MOS D2PAK-7L 650V Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V Qualification: AEC-Q101 |
auf Bestellung 3176 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVBG060N065SC1 | Hersteller : ON Semiconductor |
NVBG060N065SC1 |
Produkt ist nicht verfügbar |
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NVBG060N065SC1 | Hersteller : ON Semiconductor |
Silicon Carbide MOSFET,44mohm,650V Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVBG060N065SC1 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Pulsed drain current: 130A Power dissipation: 85W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 50mΩ Mounting: SMD Gate charge: 74nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NVBG060N065SC1 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Pulsed drain current: 130A Power dissipation: 85W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 50mΩ Mounting: SMD Gate charge: 74nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |