
NVBG060N090SC1 onsemi

Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Qualification: AEC-Q101
auf Bestellung 308000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
800+ | 15.02 EUR |
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Technische Details NVBG060N090SC1 onsemi
Description: SIC MOS N-CH 900V 5.8A D2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V, Power Dissipation (Max): 3.6W (Ta), 211W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -10V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG060N090SC1 nach Preis ab 17.28 EUR bis 27.35 EUR
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NVBG060N090SC1 | Hersteller : onsemi |
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auf Bestellung 1003 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG060N090SC1 | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V Power Dissipation (Max): 3.6W (Ta), 211W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -10V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V Qualification: AEC-Q101 |
auf Bestellung 308477 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG060N090SC1 | Hersteller : ON Semiconductor |
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auf Bestellung 594 Stücke: Lieferzeit 21-28 Tag (e) |
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NVBG060N090SC1 | Hersteller : ON Semiconductor |
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NVBG060N090SC1 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NVBG060N090SC1 | Hersteller : ONSEMI |
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Produkt ist nicht verfügbar |