NVBG070N120M3S onsemi
Hersteller: onsemiDescription: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 74400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 12.27 EUR |
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Technische Details NVBG070N120M3S onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Power Dissipation (Max): 172W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 7mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG070N120M3S nach Preis ab 15.02 EUR bis 35.56 EUR
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NVBG070N120M3S | Hersteller : onsemi |
Description: SILICON CARBIDE (SIC) MOSFET-ELI Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 172W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 74918 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG070N120M3S | Hersteller : onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 70MOHM 1200V M3 |
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NVBG070N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG070N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVBG070N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG070N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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NVBG070N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVBG070N120M3S | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 93A; 86W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Pulsed drain current: 93A Power dissipation: 86W Case: D2PAK-7 Gate-source voltage: -3...18V On-state resistance: 136mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |