NVBG070N120M3S onsemi
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 800+ | 14.6 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
800 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NVBG070N120M3S onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Power Dissipation (Max): 172W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 7mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG070N120M3S nach Preis ab 17.87 EUR bis 43.79 EUR
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NVBG070N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET-ELI Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 172W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 74918 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG070N120M3S | onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 70MOHM 1200V M3 |
auf Bestellung 1569 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG070N120M3S | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG070N120M3S | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVBG070N120M3S |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 74918 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.83 EUR |
| 10+ | 19.64 EUR |
| 100+ | 17.87 EUR |
| NVBG070N120M3S |
|
Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 70MOHM 1200V M3
SiC MOSFETs SIC MOS D2PAK-7L 70MOHM 1200V M3
auf Bestellung 1569 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.11 EUR |
| 10+ | 21.74 EUR |
| 100+ | 18.83 EUR |
| 500+ | 18.8 EUR |
| 800+ | 18.77 EUR |
| NVBG070N120M3S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 40.23 EUR |
| NVBG070N120M3S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101
Trans MOSFET N-CH SiC 1.2KV 36A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 43.79 EUR |