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NVBG070N120M3S

NVBG070N120M3S onsemi

NVBG070N120M3S-D.PDF
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
auf Bestellung 74400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+12.27 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVBG070N120M3S onsemi

Description: SILICON CARBIDE (SIC) MOSFET-ELI, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, Grade: Automotive, Supplier Device Package: D2PAK-7, Vgs(th) (Max) @ Id: 4.4V @ 7mA, Power Dissipation (Max): 172W (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).

Weitere Produktangebote NVBG070N120M3S nach Preis ab 15.02 EUR bis 23.62 EUR

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NVBG070N120M3S NVBG070N120M3S Hersteller : onsemi NVBG070N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET-ELI
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 74918 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.39 EUR
10+16.5 EUR
100+15.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG070N120M3S NVBG070N120M3S Hersteller : onsemi NVBG070N120M3S-D.PDF SiC MOSFETs SIC MOS D2PAK-7L 70MOHM 1200V M3
auf Bestellung 1569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.62 EUR
10+18.27 EUR
100+15.82 EUR
500+15.8 EUR
800+15.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG070N120M3S Hersteller : ONN NVBG070N120M3S-D.PDF
auf Bestellung 736 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH