NVBG075N065SC1 onsemi
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 800+ | 10.29 EUR |
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Technische Details NVBG075N065SC1 onsemi
Description: SIC MOS D2PAK-7L 650V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG075N065SC1 nach Preis ab 10.7 EUR bis 21.89 EUR
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NVBG075N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650V Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V Qualification: AEC-Q101 |
auf Bestellung 3008 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG075N065SC1 | onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 650V |
auf Bestellung 1552 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVBG075N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7 Type of transistor: N-MOSFET Technology: SiC Polarisation: N Drain-source voltage: 650V Drain current: 37A Power dissipation: 139W Case: D2PAK-7 Gate-source voltage: -8...22V Mounting: SMD Gate charge: 59nC Kind of channel: enhancement Application: automotive industry |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVBG075N065SC1 |
|
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 3008 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 21.82 EUR |
| 10+ | 15.27 EUR |
| 100+ | 12.59 EUR |
| NVBG075N065SC1 |
|
Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 650V
SiC MOSFETs SIC MOS D2PAK-7L 650V
auf Bestellung 1552 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 21.89 EUR |
| 10+ | 15.33 EUR |
| 100+ | 12.65 EUR |
| 500+ | 11.88 EUR |
| NVBG075N065SC1 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 37A
Power dissipation: 139W
Case: D2PAK-7
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 37A
Power dissipation: 139W
Case: D2PAK-7
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 10.7 EUR |