| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.42 EUR |
| 10+ | 14.18 EUR |
| 100+ | 11.98 EUR |
| 500+ | 11.85 EUR |
| 800+ | 11.19 EUR |
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Technische Details NVBG080N120SC1 onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG080N120SC1 nach Preis ab 12.02 EUR bis 20.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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NVBG080N120SC1 | onsemi |
 Description: SICFET N-CH 1200V 30A D2PAK-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 567 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVBG080N120SC1 | ON Semiconductor |
|
auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVBG080N120SC1 |
|
Hersteller: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 567 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.5 EUR |
| 10+ | 14.22 EUR |
| 100+ | 12.02 EUR |
| NVBG080N120SC1 |
|
Hersteller: ON Semiconductor
auf Bestellung 600 Stücke:
Lieferzeit 21-28 Tag (e)