NVBG095N065SC1 onsemi
Hersteller: onsemiDescription: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 8.72 EUR |
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Technische Details NVBG095N065SC1 onsemi
Description: SIC MOS D2PAK-7L 650V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 4mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG095N065SC1 nach Preis ab 9.93 EUR bis 18 EUR
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NVBG095N065SC1 | Hersteller : onsemi |
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auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG095N065SC1 | Hersteller : onsemi |
Description: SIC MOS D2PAK-7L 650V Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 4mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V Qualification: AEC-Q101 |
auf Bestellung 6323 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG095N065SC1 | Hersteller : ON Semiconductor |
Silicon Carbide MOSFET,70mohm,650V Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVBG095N065SC1 | Hersteller : ON Semiconductor |
Silicon Carbide MOSFET,70mohm,650V Automotive AEC-Q101 |
Produkt ist nicht verfügbar |