NVBG095N065SC1 onsemi
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 800+ | 10.38 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
800 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NVBG095N065SC1 onsemi
Description: SIC MOS D2PAK-7L 650V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 4mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG095N065SC1 nach Preis ab 11.82 EUR bis 21.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NVBG095N065SC1 | onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 650V |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG095N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650V Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 4mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V Qualification: AEC-Q101 |
auf Bestellung 6323 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVBG095N065SC1 |
|
Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 650V
SiC MOSFETs SIC MOS D2PAK-7L 650V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.28 EUR |
| 10+ | 14.83 EUR |
| 100+ | 12.67 EUR |
| 500+ | 12.42 EUR |
| 800+ | 11.82 EUR |
| NVBG095N065SC1 |
|
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 6323 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.42 EUR |
| 10+ | 14.88 EUR |
| 100+ | 12.71 EUR |