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NVBG095N065SC1

NVBG095N065SC1 onsemi

nvbg095n065sc1-d.pdf
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+8.72 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVBG095N065SC1 onsemi

Description: SIC MOS D2PAK-7L 650V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Grade: Automotive, Supplier Device Package: D2PAK-7, Vgs(th) (Max) @ Id: 4.3V @ 4mA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V.

Weitere Produktangebote NVBG095N065SC1 nach Preis ab 9.93 EUR bis 18 EUR

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NVBG095N065SC1 NVBG095N065SC1 onsemi NVBG095N065SC1-D.PDF SiC MOSFETs SIC MOS D2PAK-7L 650V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.88 EUR
10+12.46 EUR
100+10.65 EUR
500+10.44 EUR
800+9.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG095N065SC1 NVBG095N065SC1 onsemi nvbg095n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 6323 Stücke:
Lieferzeit 10-14 Tag (e)
1+18 EUR
10+12.5 EUR
100+10.68 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG095N065SC1 NVBG095N065SC1-D.PDF
NVBG095N065SC1
Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 650V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.88 EUR
10+12.46 EUR
100+10.65 EUR
500+10.44 EUR
800+9.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG095N065SC1 nvbg095n065sc1-d.pdf
NVBG095N065SC1
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 6323 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18 EUR
10+12.5 EUR
100+10.68 EUR
Im Einkaufswagen  Stück im Wert von  UAH