Produkte > ONSEMI > NVBG1000N170M1
NVBG1000N170M1

NVBG1000N170M1 onsemi

nvbg1000n170m1-d.pdf Hersteller: onsemi
Description: SIC 1700V MOS 1O IN TO263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 20V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 640µA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+5.15 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NVBG1000N170M1 onsemi

Description: SIC 1700V MOS 1O IN TO263-7L, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 20V, Power Dissipation (Max): 51W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 640µA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 1000 V, Qualification: AEC-Q101.

Weitere Produktangebote NVBG1000N170M1 nach Preis ab 5.39 EUR bis 12.41 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NVBG1000N170M1 NVBG1000N170M1 Hersteller : onsemi NVBG1000N170M1_D-3392674.pdf SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.91 EUR
10+8.71 EUR
25+8.08 EUR
100+7.23 EUR
250+6.86 EUR
500+6.35 EUR
800+5.40 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVBG1000N170M1 NVBG1000N170M1 Hersteller : onsemi nvbg1000n170m1-d.pdf Description: SIC 1700V MOS 1O IN TO263-7L
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 20V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 640µA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 1350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.41 EUR
10+8.27 EUR
25+7.20 EUR
100+5.98 EUR
250+5.39 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NVBG1000N170M1 Hersteller : ON Semiconductor nvbg1000n170m1-d.pdf SIC 1700V MOS 1O IN TO263
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVBG1000N170M1 Hersteller : ONSEMI nvbg1000n170m1-d.pdf NVBG1000N170M1 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH