NVBG1000N170M1 onsemi
Hersteller: onsemi
Description: SIC 1700V MOS 1O IN TO263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 20V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 640µA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 1000 V
Qualification: AEC-Q101
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Technische Details NVBG1000N170M1 onsemi
Description: SIC 1700V MOS 1O IN TO263-7L, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 20V, Power Dissipation (Max): 51W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 640µA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 1000 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG1000N170M1 nach Preis ab 6.41 EUR bis 14.77 EUR
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NVBG1000N170M1 | onsemi |
SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L |
auf Bestellung 380 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG1000N170M1 | onsemi |
Description: SIC 1700V MOS 1O IN TO263-7L Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 20V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 640µA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 1350 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVBG1000N170M1 |
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Hersteller: onsemi
SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.79 EUR |
| 10+ | 10.36 EUR |
| 25+ | 9.62 EUR |
| 100+ | 8.6 EUR |
| 250+ | 8.16 EUR |
| 500+ | 7.56 EUR |
| 800+ | 6.43 EUR |
| NVBG1000N170M1 |
|
Hersteller: onsemi
Description: SIC 1700V MOS 1O IN TO263-7L
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 20V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 640µA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 1000 V
Qualification: AEC-Q101
Description: SIC 1700V MOS 1O IN TO263-7L
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 20V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 640µA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 1350 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.77 EUR |
| 10+ | 9.84 EUR |
| 25+ | 8.57 EUR |
| 100+ | 7.12 EUR |
| 250+ | 6.41 EUR |