NVBG160N120SC1 onsemi
Hersteller: onsemi
Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
Qualification: AEC-Q101
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Technische Details NVBG160N120SC1 onsemi
Description: SICFET N-CH 1200V 19.5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc), Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 2.5mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG160N120SC1 nach Preis ab 13.14 EUR bis 30.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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NVBG160N120SC1 | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG160N120SC1 | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG160N120SC1 | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG160N120SC1 | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG160N120SC1 | onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 160MOHM 1200V |
auf Bestellung 408 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG160N120SC1 | onsemi |
Description: SICFET N-CH 1200V 19.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 1058 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG160N120SC1 | ONSEMI |
Description: ONSEMI - NVBG160N120SC1 - SIC MOSFET, N-CH, 20V, 19.5A, TO-263HV tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 19.5A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Gate-Source-Schwellenspannung, max.: 3V MOSFET-Modul-Konfiguration: Single Verlustleistung: 136W Bauform - Transistor: TO-263HV (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: EliteSiC Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: N Channel Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 20V Drain-Source-Durchgangswiderstand: 0.16ohm directShipCharge: 25 |
auf Bestellung 710 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVBG160N120SC1 | ON Semiconductor |
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auf Bestellung 630 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVBG160N120SC1 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 19.17 EUR |
| NVBG160N120SC1 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 20.55 EUR |
| 10+ | 19.62 EUR |
| 25+ | 18.72 EUR |
| NVBG160N120SC1 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 20.55 EUR |
| 10+ | 20.05 EUR |
| 25+ | 19.44 EUR |
| NVBG160N120SC1 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
Trans MOSFET N-CH SiC 1.2KV 19.5A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 20.86 EUR |
| NVBG160N120SC1 |
|
Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 160MOHM 1200V
SiC MOSFETs SIC MOS D2PAK-7L 160MOHM 1200V
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.45 EUR |
| 10+ | 16.31 EUR |
| 100+ | 13.14 EUR |
| NVBG160N120SC1 |
|
Hersteller: onsemi
Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 19.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1058 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.9 EUR |
| 10+ | 16.62 EUR |
| 100+ | 13.36 EUR |
| NVBG160N120SC1 |
|
Hersteller: ONSEMI
Description: ONSEMI - NVBG160N120SC1 - SIC MOSFET, N-CH, 20V, 19.5A, TO-263HV
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 19.5A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Source-Schwellenspannung, max.: 3V
MOSFET-Modul-Konfiguration: Single
Verlustleistung: 136W
Bauform - Transistor: TO-263HV (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 0.16ohm
directShipCharge: 25
Description: ONSEMI - NVBG160N120SC1 - SIC MOSFET, N-CH, 20V, 19.5A, TO-263HV
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 19.5A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Source-Schwellenspannung, max.: 3V
MOSFET-Modul-Konfiguration: Single
Verlustleistung: 136W
Bauform - Transistor: TO-263HV (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 0.16ohm
directShipCharge: 25
auf Bestellung 710 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 30.37 EUR |
| 10+ | 27.94 EUR |
| 25+ | 25.54 EUR |
| 50+ | 25.25 EUR |
| 100+ | 25.01 EUR |
| 250+ | 24.76 EUR |
| 500+ | 24.57 EUR |
| NVBG160N120SC1 |
|
Hersteller: ON Semiconductor
auf Bestellung 630 Stücke:
Lieferzeit 21-28 Tag (e)