NVBLS001N06C onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 51A/422A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 422A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Power Dissipation (Max): 4.2W (Ta), 284W (Tc)
Vgs(th) (Max) @ Id: 4V @ 562µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11575 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 51A/422A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 422A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Power Dissipation (Max): 4.2W (Ta), 284W (Tc)
Vgs(th) (Max) @ Id: 4V @ 562µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11575 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 10.02 EUR |
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Produktbewertung abgeben
Technische Details NVBLS001N06C onsemi
Description: MOSFET N-CH 60V 51A/422A 8HPSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 422A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V, Power Dissipation (Max): 4.2W (Ta), 284W (Tc), Vgs(th) (Max) @ Id: 4V @ 562µA, Supplier Device Package: 8-HPSOF, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11575 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBLS001N06C nach Preis ab 9.07 EUR bis 26.52 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NVBLS001N06C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 51A Automotive AEC-Q101 9-Pin(8+Tab) TO-LL T/R |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBLS001N06C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 51A Automotive AEC-Q101 9-Pin(8+Tab) TO-LL T/R |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBLS001N06C | Hersteller : onsemi |
Description: MOSFET N-CH 60V 51A/422A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 422A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V Power Dissipation (Max): 4.2W (Ta), 284W (Tc) Vgs(th) (Max) @ Id: 4V @ 562µA Supplier Device Package: 8-HPSOF Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11575 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 4655 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBLS001N06C | Hersteller : onsemi | MOSFET NFET TOLL 60V 1.0MO |
auf Bestellung 4531 Stücke: Lieferzeit 14-28 Tag (e) |
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NVBLS001N06C | Hersteller : ONSEMI |
Description: ONSEMI - NVBLS001N06C - Leistungs-MOSFET, n-Kanal, 60 V, 422 A, 750 µohm, H-PSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 422A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 284W Bauform - Transistor: H-PSOF Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 750µohm |
auf Bestellung 481 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBLS001N06C | Hersteller : ONSEMI |
Description: ONSEMI - NVBLS001N06C - Leistungs-MOSFET, n-Kanal, 60 V, 422 A, 750 µohm, H-PSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 422A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 284W Bauform - Transistor: H-PSOF Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 750µohm |
auf Bestellung 481 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBLS001N06C | Hersteller : ON Semiconductor |
auf Bestellung 1940 Stücke: Lieferzeit 21-28 Tag (e) |
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NVBLS001N06C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 51A Automotive AEC-Q101 9-Pin(8+Tab) TO-LL T/R |
Produkt ist nicht verfügbar |
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NVBLS001N06C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 51A Automotive AEC-Q101 9-Pin(8+Tab) TO-LL T/R |
Produkt ist nicht verfügbar |