NVCR8LS025N65S3A onsemi
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): 30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produktrezensionen
Produktbewertung abgeben
Technische Details NVCR8LS025N65S3A onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): 30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 4.5V @ 3mA, Power Dissipation (Max): 595W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 37.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk.