auf Bestellung 11767 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
28+ | 1.91 EUR |
31+ | 1.7 EUR |
100+ | 1.16 EUR |
500+ | 0.97 EUR |
1000+ | 0.82 EUR |
2500+ | 0.74 EUR |
5000+ | 0.69 EUR |
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Technische Details NVD3055L170T4G-VF01 onsemi
Description: MOSFET N-CH 60V 9A DPAK, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V, Power Dissipation (Max): 28.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVD3055L170T4G-VF01
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NVD3055L170T4G-VF01 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 9A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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NVD3055L170T4G-VF01 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 9A DPAK Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V Power Dissipation (Max): 28.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVD3055L170T4G-VF01 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 9A DPAK Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V Power Dissipation (Max): 28.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |